PART |
Description |
Maker |
16299 16299-A |
Slim Power Relay, 1 Form A, 6A 250VAC, Silver Alloy Contact HTSNK, C X-FLOW, .4H LOW FLOW, THREADED HTSNK C X-FLOW .4H LOW FLOW THREADED
|
VICOR[Vicor Corporation]
|
17572 17572-G |
HTSNK. B X-FLOW. .9H LOW FLOW. THRU HOLE HTSNKB型X流0.9 低流量。通孔
|
Vicor, Corp. VICOR[Vicor Corporation]
|
G6A-274P-ST |
Resistant to electromagnetic interference
|
Omron Electronics LLC
|
RM87 RM84 RM85 |
Miniature Electromagnetic Relays
|
Altech corporation
|
WST-1203UX WST-1203UX-16 |
THIS SPECIFICATION APPLIES TO THE ELECTROMAGNETIC BUZZER
|
Soberton Inc.
|
WST-1212S WST-1212S-16 |
THIS SPECIFICATION APPLIES TO THE ELECTROMAGNETIC BUZZER
|
Soberton Inc.
|
17510-6 17510 |
HTSNK, A X-FLOW, .4H LOW FLOW, THREADED
|
VICOR[Vicor Corporation]
|
BAT18-05 BAT18 BAT18-04 |
CUSTOM SENSOR, ELECTROMAGNETIC Silicon RF Switching Diode
|
INFINEON[Infineon Technologies AG]
|
CY7C1297H-133AXC |
1-Mbit (64K x 18) Flow-Through Sync SRAM; Architecture: Standard Sync, Flow-through; Density: 1 Mb; Organization: 64Kb x 18; Vcc (V): 3.1 to 3.6 V
|
CYPRESS SEMICONDUCTOR CORP
|
AS7C33256FT32_36A AS7C33256FT32_36A.V1.1 AS7C33256 |
3.3V 256K x 32/36 Flow-through synchronous SRAM 256K X 32 STANDARD SRAM, 8.5 ns, PQFP100 3.3V 256K x 32/36 Flow-through synchronous SRAM 256K X 36 STANDARD SRAM, 7.5 ns, PQFP100 3.3V 256K x 32/36 Flow-through synchronous SRAM 256K X 32 STANDARD SRAM, 7.5 ns, PQFP100 3.3V 256K x 32/36 Flow-through synchronous SRAM 256K X 32 STANDARD SRAM, 10 ns, PQFP100 DIODE ZENER SINGLE 1000mW 24Vz 10.5mA-Izt 0.05 5uA-Ir 18.2Vr DO41-GLASS 5K/AMMO From old datasheet system Sync SRAM - 3.3V
|
Alliance Semiconductor, Corp. Alliance Semiconductor Corporation ALSC
|